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Highly Efficient Thermoelectricity Based on Self-Doped Carbon Nanotubes through the Repetitive Filtration Process
Minsuk Park1, Seongjoo Hwang1, Takahiro Nakae2
1Department of Chemistry, Yonsei University, Seoul 03722, Republic of Korea.
ACS Applied Materials & Interfaces
|March 13, 2025
Summary
Introducing metallic single-walled carbon nanotubes (m-SWCNTs) into semiconducting SWCNTs (s-SWCNTs) enhances thermoelectric performance. This self-doping strategy boosts power factor and figure of merit without compromising the Seebeck coefficient.
Area of Science:
- Materials Science
- Nanotechnology
- Energy Conversion
Background:
- Conventional thermoelectric (TE) materials research focuses on highly pure semiconducting single-walled carbon nanotubes (s-SWCNTs) with external doping.
- Achieving superior TE performance in SWCNT films has been challenging due to purity and doping limitations.
Purpose of the Study:
- To investigate the effect of minute quantities of metallic single-walled carbon nanotubes (m-SWCNTs) on the thermoelectric performance of s-SWCNT films.
- To develop a self-doping strategy for enhancing TE properties in SWCNT-based devices.
Main Methods:
- Utilized repetitive filtration (RF) processes to prepare s-SWCNT films with controlled amounts of m-SWCNTs.
- Employed spectroscopic analyses to verify film purity and characterize SWCNT states.
- Determined doping states via optical bleaching and analyzed TE device performance.
Main Results:
- RF process increased s-SWCNT purity to over 99%, reducing impurities and bundling.
- Self-doping by endogenous m-SWCNTs was observed, influenced by Fermi levels and redox environments.
- Achieved highest power factor (PF) of 8309 μW/m·K² and figure of merit (zT) of 0.17 with a Seebeck coefficient (α) of 645 μV/K.
Conclusions:
- Minute quantities of m-SWCNTs facilitate effective self-doping in s-SWCNT films.
- This strategy enhances electrical conductivity and TE performance without external dopants.
- The developed method offers a promising route for high-performance SWCNT-based thermoelectric devices.

