Sequential Infiltration Synthesis (SIS) of In2O3-Based Porous Photoelectrodes for Molecular Sensitization

Zihao Wang1, Niklas B Thompson2, Mark Muir1

  • 1Materials Science Division, Argonne National Laboratory, Lemont, Illinois 60439, United States.

Summary

Porous Indium-Zinc-Oxide (IZO) photoelectrodes were created using Sequential Infiltration Synthesis (SIS). These high-surface-area materials enhance solar energy conversion by enabling greater light absorption.

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