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Optimizing Charge Transport Layers to Enhance the Performance of Lead-Free RbGeI3 Perovskite Solar Cells: A
Md Selim Reza1, Avijit Ghosh1, Hala A Ibrahium2
1Department of Electrical and Electronic Engineering, Begum Rokeya University, Rangpur 5400, Bangladesh.
This study introduces novel hybrid perovskite solar cells using rubidium-germanium-iodide (RbGeI3) substrates. Device I achieved a record 33.84% power conversion efficiency, showcasing RbGeI3
Area of Science:
- Materials Science
- Renewable Energy
- Solid-State Physics
Background:
- Hybrid perovskite solar cells are a promising renewable energy technology.
- Rubidium-germanium-iodide (RbGeI3) presents a novel substrate for perovskite solar cells.
- Optimization of hole and electron transport layers is crucial for device efficiency.
Purpose of the Study:
- To investigate innovative hybrid perovskite solar cells utilizing RbGeI3 as the substrate.
- To explore the impact of various hole transport layers (Cu2O, CuO, SnSe) and electron transport layers (ETLs).
- To optimize device configuration and parameters for maximum power conversion efficiency.
Main Methods:
- Fabrication and simulation (SCAPS-1D) of three hybrid perovskite solar cell configurations.
- Selection and optimization of Indium Gallium Zinc Oxide (IGZO) as the optimal ETL.
- Detailed analysis of doping concentration, layer thickness, defect density, temperature, and interface defects.
Main Results:
- Device I (Al/FTO/IGZO/RbGeI3/Cu2O/Ni) achieved a power conversion efficiency (PCE) of 33.84%, a fill factor of 86.78%, an open-circuit voltage (VOC) of 1.13 V, and a short-circuit current density (JSC) of 34.54 mA/cm2.
- Devices II and III exhibited PCEs of 25.91% and 25.21%, respectively.
- Comprehensive analysis of resistances, generation-recombination rates, carrier dynamics, and quantum efficiency.
Conclusions:
- RbGeI3-based hybrid perovskite solar cells demonstrate significant potential for high-efficiency photovoltaic applications.
- Device I sets a new benchmark for RbGeI3 solar cells, highlighting the effectiveness of the Cu2O HTL and IGZO ETL.
- Further research into interface engineering and defect mitigation can lead to even higher performance.
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