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Updated: May 22, 2025

Resonance Raman Spectroscopy of Extreme Nanowires and Other 1D Systems
Published on: April 28, 2016
Uniaxial Strain-Dependent Resonant Raman Scattering in WS2
Devesh Negi1, Mrinmoy Baishya1, Aditi Raman Moghe1
1Department of Physics, Indian Institute of Science Education and Research, Bhopal, 462066, India.
Abstract:
2D transition metal dichalcogenides (TMDCs) have attracted immense interest due to their remarkable optical and electronic properties. The exceptional mechanical strength and flexibility of these materials enable the modification and tunability of their properties through applied strain, providing a fertile platform for fundamental studies and advanced flexible device applications. Herein, the phononic and excitonic properties of tungsten disulfide (WS2) flakes under uniaxial tensile strain are investigated using Raman spectroscopy. In sharp contrast to a previous report on a monolayer of chemical vapor deposition grown WS2, the measurements on exfoliated single crystals of WS2 show an intriguing dome-like feature in the Raman intensity over strain. Such a behavior can be attributed to the strain-induced tuning of the excitonic levels that resonate with the laser excitation line at specific strain, implying its plausible sensor applications. Furthermore, to demonstrate this proof-of-concept, the Raman intensity is used to map the spatial variation of strain in intentionally wrinkled WS2 flake. The study provides the means to investigate the effect of strain on the phononic and (opto-)electronic properties of WS2 and demonstrates its potential stain-sensor application.
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