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Scanning Electron Microscopy

Scanning Electron Microscopy

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Quantifying Patterned Features on Material Surfaces Created using Ga Ion Beam in FIB-SEM.

Supriya Ghosh¹, K Andre Mkhoyan¹

¹Department of Chemical Engineering and Materials Science, University of Minnesota, 421 Washington Ave. S.E., Minneapolis, MN 55455, USA.

Microscopy and Microanalysis : the Official Journal of Microscopy Society of America, Microbeam Analysis Society, Microscopical Society of Canada

|March 17, 2025

Summary

This summary is machine-generated.

Focused ion beam (FIB) parameters precisely control surface modifications and nanoscale pattern resolution on silicon and strontium titanate. Total ion dose is the key factor, enabling reproducible patterning down to 10 nm.

Keywords:

FIB SEM STEM ion beam lithography line width patterning

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Published on: December 5, 2015

Area of Science:

Materials Science
Nanotechnology
Surface Engineering

Background:

Focused ion beam (FIB) instruments are crucial for nanoscale material modification.
Understanding ion beam-material interactions is essential for precise surface patterning.
Quantifying surface modifications requires systematic analysis of process parameters.

Purpose of the Study:

To introduce and apply parameters for quantifying surface modifications and pattern resolution using a Ga ion beam.
To investigate the influence of ion dose on material removal and amorphization.
To determine the material-specific requirements for achieving nanoscale patterns.

Main Methods:

Utilized a focused ion beam (FIB) instrument for surface patterning.
Employed scanning electron microscopy (SEM) and scanning transmission electron microscopy (STEM) for imaging.
Applied energy-dispersive X-ray spectroscopy (EDS) for compositional analysis.
Systematically varied ion dose, spot overlap, dwell time, and beam passes.

Main Results:

Total ion dose was identified as the primary parameter controlling line characteristics.
Higher ion doses (>10^15 ions/cm^2) resulted in material removal (channels) and amorphization.
Lower ion doses led to amorphization, forming surface ridges.
Si and SrTiO3 exhibited a strong material dependence, requiring orders of magnitude different ion doses for similar patterning.

Conclusions:

Precise control over FIB parameters allows for reproducible nanoscale patterning.
Surface modification mechanisms (etching vs. amorphization) are dose-dependent.
Achieved reproducible patterning of lines as fine as 10 nm on different material surfaces.