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Flexible Solar-Blind Ultraviolet Photodetector Based on β-Ga2O3 Nanowire Channel Bridge Structure: Combining High
Jinyun Liu1,2,3, Tengfei Ma1,2, Huihui Tian1,2,3
1CAS Key Laboratory of Magnetic Materials and Devices, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China.
Abstract:
Solar-blind ultraviolet photodetectors are gaining attention for their high signal-to-noise ratio and strong anti-interference capabilities. With the rising demand for applications in high-strain environments, such as fire rescue robots and smart firefighting suits, a flexible photodetector that maintains stable performance under bending strain is needed. Current devices struggle to balance strain cycle stability and responsivity. This paper presents a β-Ga2O3 nanowire photodetector on a flexible ultra-thin silicon substrate, fabricated using microchannel engraving and chemical vapor deposition. The device achieves a responsivity of 266 mA W-1 without strain, with less than 5.5% variation in photogenerated current under bending strain (0-60°), and a response time of 360 ms. After 500 cycles of 60° bending, the photogenerated current changes by only 1.5%, demonstrating excellent stability and responsivity, with broad application potential in flame detection and biological sensing.
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