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Fabrication of Flexible Image Sensor Based on Lateral NIPIN Phototransistors
Published on: June 23, 2018
Constructing Perovskite Organic Phototransistors Using a Triple Strategy to Achieve Visible and NIR Visual Synapses
Xin Huang1,2, Meng Wang1,2, Wei Wen3
1School of Geophysics and Information Technology, China University of Geosciences Beijing, Beijing, 100083, China.
Abstract:
Photoelectric synaptic transistors have the advantages of high bandwidth, high signal-to-noise ratio, low power consumption, and low crosstalk, which are crucial for the development of artificial visual perception systems. However, photoelectric synaptic transistors have problems such as low light sensitivity, narrow detection bandwidth, and poor adaptability to biological light. Here, a ternary strategy is employed to combine 2D perovskite with infrared polymeric material poly (n-alkylpyrrole dithiophene) (PDPP-DTT, abbreviated as PDPP) and small molecular material PC61 BM to fabricated visible infrared wide spectrum phototransistor, which has both synaptic function and visual adaptative functions. The introduction of PDPP:PC61 BM organic heterojunction promotes the separation and injection of photogenerated carriers in phototransistors, leading to high photosensitivity to visible and infrared light, achieving 4.9 × 105 and 1.9 × 105, respectively. Gate voltage, light intensity, and defects in perovskite organic heterojunctions can regulate the concentration of charge carriers in transistors, allowing the device array to mimic visual synapses and adaptive functions under red, green, blue and NIR light. The triple strategy for fabricating perovskite organic heterojunction transistors provides technical support for the development of high light sensitivity, wide bandwidth, and multifunctional artificial vision systems.
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