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Electron Transport in Borophene-Graphene Lateral Edge-Edge Junctions
Yuefei Huang1, Henry Yu1, Favian Sun1
1Department of Materials Science and NanoEngineering, Rice University, Houston, Texas 77005, United States.
ACS Nano
|March 18, 2025
Summary
Borophene-graphene heterojunctions show promise for nanoelectronics. Borophene
Area of Science:
- Materials Science
- Condensed Matter Physics
- Nanotechnology
Background:
- Lateral heterojunctions between borophene and graphene are a recent breakthrough.
- Understanding electron transport at this interface is crucial for nanoelectronic applications.
Purpose of the Study:
- To investigate the electron transport properties of the borophene-graphene interface.
- To calculate the transmission spectrum and contact resistance of the junction.
Main Methods:
- Density functional theory (DFT) calculations.
- Non-equilibrium Green's function (NEGF) method.
- Analysis of electron transmission based on energy, momentum, and wave function symmetry matching.
Main Results:
- Borophene's σ electrons are fully reflected at the interface.
- Borophene's π electrons exhibit high transmission probability (up to 0.8).
- Achieved low contact resistance of ~115 Ω·μm at a doping level of 2 × 1012 cm2.
Conclusions:
- Borophene demonstrates excellent conductivity in graphene-based devices.
- The achieved contact resistance is superior to that of traditional metal contacts like Pd and Au.
- Borophene is a promising material for advanced nanoelectronic applications.
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