Related Experiment Video
Updated: May 21, 2025

14:58
Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping
Published on: June 3, 2015
14.4K
8-bit states in 2D floating-gate memories using gate-injection mode for large-scale convolutional neural networks
Yuchen Cai1,2, Jia Yang1,2, Yutang Hou3
1CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, National Center for Nanoscience and Technology, Beijing, P. R. China.
Nature Communications
|March 19, 2025
Summary
New gate-injection-mode two-dimensional floating-gate memories offer high-efficiency neuromorphic computing. These advanced memories achieve 8-bit states and stability, paving the way for large-scale neural network accelerators.
Area of Science:
- Materials Science
- Electrical Engineering
- Computer Science
Background:
- The rapid advancement of artificial intelligence necessitates efficient neuromorphic computing hardware.
- Existing two-dimensional floating-gate memories face limitations in state numbers and stability, restricting their practical application.
Purpose of the Study:
- To introduce gate-injection-mode two-dimensional floating-gate memories as a viable solution for large-scale neural network accelerators.
- To enhance memory performance for neuromorphic computing applications.
Main Methods:
- Utilized a coplanar device structure design.
- Implemented a bi-pulse state programming strategy to achieve multi-bit storage.
- Fabricated and tested an array of 256 devices to assess performance and yield.
Main Results:
- Achieved 8-bit states with intervals greater than three times the standard deviation at 3V.
- Demonstrated stability exceeding 10,000 seconds and cycling endurance over 10^5.
- Attained a device yield of 94.9% for the 256 fabricated devices.
- Successfully performed experimental image convolutions and kernel transplanting on a 9x2 array, with results aligning with simulations.
- Showcased that 8-bit precision fixed-point neural networks achieve inference accuracies close to ideal values.
Conclusions:
- Gate-injection-mode two-dimensional floating-gate memories show significant potential for high-efficiency neuromorphic computing hardware.
- The demonstrated performance metrics and successful integration validate their suitability for neural network accelerators.
Related Concept Videos
MOSFET: Enhancement Mode
256
Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no...
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no...
256
Neural Circuits
957
Neural circuits and neuronal pools are two of the main structures found in the nervous system. Neural circuits are networks of neurons that work together to carry out a specific task or process. They consist of interconnected neurons and glial cells, which provide structural and metabolic support.
Neuronal pools are collections of nerve cells with similar functions and interact through chemical and electrical signals. These pools include both interneurons (the central neural circuit nodes that...
Neuronal pools are collections of nerve cells with similar functions and interact through chemical and electrical signals. These pools include both interneurons (the central neural circuit nodes that...
957
MOS Capacitor
661
A Metal-Oxide-Semiconductor (MOS) capacitor is a fundamental structure used extensively in semiconductor device technology, particularly in the fabrication of integrated circuits and MOSFETs (metal-oxide-semiconductor field-effect transistors). The MOS capacitor consists of three layers: a metal gate, a dielectric oxide, and a semiconductor substrate.
The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...
The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...
661

