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A high-performance broadband polarization-sensitive photodetector based on BiSeS nanowires
Junda Yang1, Fen Zhang1, Shuo Liu1
1Hunan Key Laboratory of Nanophotonics and Devices, School of Physics, Central South University, Changsha 410083, China. zmzhong@csu.edu.cn.
Nanoscale
|March 19, 2025
Summary
New bismuth selenide sulfide nanowires offer broadband detection from UV to NIR, with high responsivity and polarization sensitivity. These advanced photodetectors show promise for applications like deep learning image recognition.
Area of Science:
- Materials Science
- Nanotechnology
- Optoelectronics
Background:
- Bismuth selenide (Bi2Se3) is a promising material for photodetectors due to its unique properties.
- However, defects in Bi2Se3 limit device efficiency and stability.
Purpose of the Study:
- To design and prepare novel Bi2Se2.33S0.67 nanowires to overcome limitations of Bi2Se3.
- To investigate the optoelectronic properties of these new nanowires for photodetector applications.
Main Methods:
- Facile chemical vapor transport method for synthesizing Bi2Se2.33S0.67 nanowires.
- Fabrication and characterization of individual nanowire photodetectors.
Main Results:
- Broadband photoresponse from 254 nm to 1064 nm.
- Low dark current (0.015 nA), high responsivity (2.52 A W-1 at 532 nm), and high detectivity (5.2 × 1011 Jones).
- Broadband polarization sensitivity (355–808 nm) with a maximum dichroic ratio of 1.8 at 355 nm.
Conclusions:
- Bi2Se2.33S0.67 nanowires demonstrate excellent performance for broadband photodetectors.
- The polarization sensitivity and high performance validate their potential in advanced applications like deep learning image recognition.
