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Updated: May 21, 2025

Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope
Published on: May 28, 2016
Christoph Hofer1, Jacob Madsen2, Toma Susi2
1EMAT, University of Antwerp, Antwerp, Belgium.
We developed a sensitive electron ptychography technique to image atomic-scale electronic charge transfer in monolayer tungsten disulfide (WS2). This method reveals bonding information previously hidden within the dominant atomic nuclei signals.
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