Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Related Concept Videos

MOS Capacitor01:25

MOS Capacitor

655
A Metal-Oxide-Semiconductor (MOS) capacitor is a fundamental structure used extensively in semiconductor device technology, particularly in the fabrication of integrated circuits and MOSFETs (metal-oxide-semiconductor field-effect transistors). The MOS capacitor consists of three layers: a metal gate, a dielectric oxide, and a semiconductor substrate.
The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...
655

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by
Same author

Uncovering the role of ABI2 as a key regulator of flowering time in Arabidopsis.

Plant signaling & behavior·2026
Same author

YOLOv10-based multi-scale variant object detection for multi-category PPE non-compliance monitoring on construction sites.

Scientific reports·2026
Same author

TiO<sub>2</sub> nanolayer-assisted top-interface engineering for disturbance-free FeFETs: a blueprint for future van der Waals memory.

Nano convergence·2026
Same author

Unveiling the epigenetic and stress-responsive function of histone H1 in plants.

Plant signaling & behavior·2026
Same author

Hybrid ferroelectric-ionic memristive hardware for high scalability in-memory computing.

Nature communications·2026
Same author

Sub-Nanometer Ferroelectric Tunnel Junctions With Record-High on-Current Density Through Synergistic Microwave Annealing and High-Field Activation.

Small (Weinheim an der Bergstrasse, Germany)·2026
Same journal

Synergistic Buried Interface Engineering via Ion Exchange and Passivation for High-Performance Inverted Perovskite Solar Cells.

ACS applied materials & interfaces·2026
Same journal

In Situ Wet Coating of Ammonium Phosphomolybdate for Enhancing the Kinetics and Cycling Stability of NaNi<sub>1/3</sub>Fe<sub>1/3</sub>Mn<sub>1/3</sub>O<sub>2</sub> Cathode Material.

ACS applied materials & interfaces·2026
Same journal

Molecular Hybrids of Serum Albumin and Cobalt Phthalocyanine for Asymmetric Oxidation of C=C and C-H Bonds.

ACS applied materials & interfaces·2026
Same journal

A High-Throughput Platform for Measuring and Predicting Vitrification Behavior in Multicomponent Aqueous Solutions.

ACS applied materials & interfaces·2026
Same journal

A Brain-Targeted DNA Delivery Nanocarrier Modulator for Synergistic Therapy of Parkinson's Disease.

ACS applied materials & interfaces·2026
Same journal

Quasi-Discrete Channels of Porous Coordination Polymers for Selective Multiscenario CO<sub>2</sub> Recognition.

ACS applied materials & interfaces·2026
See all related articles

Related Experiment Video

Updated: May 20, 2025

In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx
09:49

In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx

Published on: May 13, 2020

4.0K

Strategic Material Design for Highly Reliable QLC 3D V-NAND Using Bypass Resistive Random Access Memory.

Geonhui Han1, Jongseon Seo1, Junghoon Park2

  • 1Center for Single Atom-based Semiconductor Device and the Department of Materials Science and Engineering, Pohang University of Science and Technology, Pohang 37673, Korea.

ACS Applied Materials & Interfaces
|March 24, 2025
PubMed
Summary
This summary is machine-generated.

Researchers developed design guidelines for electrochemical random-access memory (ECRAM) to achieve uniform quadruple-level cell (QLC) operation in V-NAND flash memory. This breakthrough enables precise control over oxygen vacancy migration for enhanced memory performance.

Keywords:
3D V-NANDQLCWOxbypass RRAMelectrochemical random-access memorymemory device

More Related Videos

Gradient Echo Quantum Memory in Warm Atomic Vapor
10:00

Gradient Echo Quantum Memory in Warm Atomic Vapor

Published on: November 11, 2013

12.8K
A Fabrication and Measurement Method for a Flexible Ferroelectric Element Based on Van Der Waals Heteroepitaxy
10:40

A Fabrication and Measurement Method for a Flexible Ferroelectric Element Based on Van Der Waals Heteroepitaxy

Published on: April 8, 2018

8.2K

Related Experiment Videos

Last Updated: May 20, 2025

In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx
09:49

In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx

Published on: May 13, 2020

4.0K
Gradient Echo Quantum Memory in Warm Atomic Vapor
10:00

Gradient Echo Quantum Memory in Warm Atomic Vapor

Published on: November 11, 2013

12.8K
A Fabrication and Measurement Method for a Flexible Ferroelectric Element Based on Van Der Waals Heteroepitaxy
10:40

A Fabrication and Measurement Method for a Flexible Ferroelectric Element Based on Van Der Waals Heteroepitaxy

Published on: April 8, 2018

8.2K

Area of Science:

  • Materials Science
  • Electrical Engineering
  • Solid-State Physics

Background:

  • Conventional flash memory faces limitations, prompting research into alternatives like electrochemical random-access memory (ECRAM).
  • Bypass RRAM shows promise for V-NAND applications due to its ion hopping conduction, but parameters for multilevel cell (MLC) operation are not fully understood.

Purpose of the Study:

  • To establish design guidelines for bypass RRAM enabling highly uniform quadruple-level cell (QLC) operation.
  • To explore the impact of quantized oxygen vacancy (Vo) injections on memory characteristics.

Main Methods:

  • Material engineering was employed to precisely control ion migration in bypass RRAM.
  • The study utilized the unique electrical properties of the WO resistive switching (RS) layer to minimize Vo migration.
  • MATLAB simulations and experimental results were used to identify key parameters like ionic barrier (Ea,ion) and ion diffusivity (Dion).

Main Results:

  • Achieved low-voltage operation (<5 V) and a high on/off ratio (>106) with minimal stoichiometry change (Δx < 0.08).
  • Optimized parameters resulted in superior QLC performance with highly uniform distribution (σ/μ ∼ 0.01) and sensing margin (ΔG ∼ 4 μS).
  • Demonstrated the absence of read disturbance issues in the optimized bypass RRAM.

Conclusions:

  • The developed design guidelines facilitate highly uniform QLC operation in bypass RRAM for V-NAND memory.
  • Reduced Vo migration at the nanoscale suggests potential for extending beyond QLC levels with quantized Vo injection.
  • This research provides a pathway for highly uniform switching in next-generation V-NAND memory technologies.