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Transfer of Substitutionally Implanted Graphene.

Zviadi Zarkua1, Ahmed Samir Lotfy1, Zeno Maesen1

  • 1Quantum Solid-State Physics, KU Leuven, 3001 Leuven, Belgium.

ACS Applied Materials & Interfaces
|March 24, 2025
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This study shows a new method to transfer manganese-doped graphene, preserving essential substitutional doping. This technique removes unwanted nonsubstitutional atoms, enabling cleaner graphene for advanced electronic applications.

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dopinggrapheneion implantationmanganesetransfer

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Area of Science:

  • Materials Science
  • Condensed Matter Physics
  • Nanotechnology

Background:

  • Ultralow energy (ULE) ion implantation enables substitutional doping of graphene with transition metals.
  • Nonsubstitutional incorporation of dopants during ULE implantation can negatively impact graphene's electronic properties.
  • Effective methods are needed to remove nonsubstitutional dopants for reliable graphene applications.

Purpose of the Study:

  • To demonstrate a method for transferring substitutionally doped graphene prepared by ULE ion implantation.
  • To preserve substitutional dopants while removing nonsubstitutional ones during the transfer process.
  • To maintain the structural and electronic integrity of doped graphene for further integration.

Main Methods:

  • Graphene doped with manganese (Mn) via ULE ion implantation.
  • Standard wet transfer process for graphene.
  • Characterization using X-ray photoelectron spectroscopy (XPS), X-ray absorption spectroscopy (XAS), scanning tunneling microscopy (STM), and angle-resolved photoemission spectroscopy (ARPES).

Main Results:

  • Successful transfer of Mn-doped graphene using a wet transfer method.
  • Preservation of substitutional Mn and removal of nonsubstitutional Mn from the surface.
  • Retention of the characteristic Dirac band structure in the transferred Mn-doped graphene.
  • Demonstrated feasibility of surface-sensitive characterization and device integration.

Conclusions:

  • A practical method for transferring substitutionally doped graphene while maintaining its integrity has been developed.
  • This technique facilitates the study of ULE ion-implanted graphene by eliminating complications from nonsubstitutional components.
  • The method enables the integration of doped graphene into complex material structures and device architectures.