Raman Forbidden Layer-Breathing Modes in Layered Semiconductor Materials Activated by Phonon and Optical Cavity

Miao-Ling Lin1,2, Jiang-Bin Wu1,2, Xue-Lu Liu1

  • 1Institute of Semiconductors, State Key Laboratory of Semiconductor Physics and Chip Technologies, Chinese Academy of Sciences, Beijing 100083, China.

PubMed
Summary

We discovered Raman forbidden layer-breathing modes (LBMs) in layered semiconductor materials. Their intensity depends on material properties and light, explained by a spatial interference model involving photon-phonon coupling.

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