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Gallium Nitride High Electron Mobility Transistor Device with Integrated On-Chip Array Junction Temperature

Yukuan Chang1, Yue Su1, Mingke Xiao1

  • 1School of Intelligent Science and Technology, Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, Hangzhou 310024, China.

Micromachines
|March 27, 2025
PubMed

Keywords:
GaN HEMTjunction temperaturemonitoring accuracytemperature monitoring unitthermal distribution

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