Design of a High Coupling SAW Resonator Based on an Al/41° Y-X LiNbO₃/SiO₂/poly-Si/Si Structure for Wideband Filter

With the rapid development of fifth-generation (5G) mobile communication technology, the performance requirements for radio frequency front-end surface acoustic wave (SAW) devices have become increasingly stringent. Surface acoustic wave devices on piezoelectric thin film-based layered structures with high electromechanical coupling coefficients and low-frequency temperature compensation characteristics have emerged as a key solution. In this work, a SAW resonator based on an Al/41° Y-X LiNbO₃/SiO₂/poly-Si/Si multi-layered structure is proposed. FEM modeling of the proposed resonator and the influences of the thicknesses of the LiNbO₃, SiO₂, and Al electrodes on performances such as the parasitic noise, bandwidth, and electromechanical coupling coefficient are analyzed. Optimal parameters for the multi-layer piezoelectric structure are identified for offering large coupling up to 24%. Based on these findings, a single-port SAW resonator with an Al/41° Y-X LiNbO₃/SiO₂/poly-Si/Si substrate structure is fabricated. The experimental results align well with the simulation results; meanwhile, the SAW filter based on the proposed resonator demonstrates that a center frequency of 2.3 GHz, a 3-dB fractional bandwidth of 23.48%, and a minimum in-band insertion loss of only 0.343 dB are simultaneously achieved. This study provides guidance for the development of multi-layer film SAW resonator-based filters with high-performance.