Related Experiment Videos
Doping effects of indium and copper on ferromagnetism in N-type magnetic semiconductor Ba(Zn,Co)2As2
Xueqin Zhao1, Jinou Dong1, Lingfeng Xie1
1School of Physics, Zhejiang University, Hangzhou, 310027, China.
Abstract:
We report the manipulation of ferromagnetism in n-type magnetic semiconductor Ba(Zn,Co)2As2 through carriers' doping. Doping In or Cu into Zn-sites introduces additional n-type or p-type carriers, respectively. Focusing on Ba(Zn0.97Co0.03)2As2 which has a [Formula: see text] ∼ 31 K, In doping introduces additional n-type carriers and 2% In doping drastically improves the ferromagnetic transition temperature by 16% to 36 K. In contrast, 1.5% Cu doping suppresses [Formula: see text] by 52% to 15 K; 3% Cu doping turns the dominant carrier to p-type, and eventually transforms the ferromagnetic ordering into a paramagnetic state. Our experimental results unequivocally demonstrate that the magnetic ordering in Ba(Zn,Co)2As2 is carriers' mediated ferromagnetism, and its ground states can be manipulated by carriers.