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Updated: Jun 28, 2026

Synthesis of Platinum-nickel Nanowires and Optimization for Oxygen Reduction Performance
Published on: April 27, 2018
Synergistic enhancement of arsenic removal by Fe-Mn binary sorbent through oxygen vacancy-mediated electron
Yue Zhang1, Yuyu Huang2, Zhichao Tang2
1Department of Energy Power & Mechanical Engineering, North China Electric Power University, Baoding 071003, China; Hebei Key Laboratory of Low Carbon and High Efficiency Power Generation Technology, North China Electric Power University, Baoding, Hebei 071003, China.
Abstract:
Defect-engineered metal oxides hold great potential for enhancing arsenic capture through improved As2O3 adsorption and oxidation processes. However, the mechanisms underlying this enhancement, particularly the electronic effects stimulated by oxygen vacancy (OV) and the intrinsic oxidation schemes, are poorly understood. In this work, experimental and theoretical studies reveal that OV generated through citric acid etching of Fe-Mn binary sorbents markedly boosts the oxidation of As(III) by iron and manganese under oxic environments. Electron paramagnetic resonance and adsorption characteristics demonstrate that selective arsenic adsorption occurs at OV, leading to a 58.9 % enhancement in confined adsorption activity. Electrochemical and electrostatic potential investigations demonstrate that OV generates a distinctive high-activity potential field on the surface, characterized by improved electrical conductivity and superior redox properties. Interfacial electron regulation enables OV to achieve directional electron redistribution for arsenic adsorption, driven by strengthened ionic and covalent bonds as well as bridged electron transport channels. The catalytic effect imparted by OV preferentially facilitates the conversion from physisorption to chemisorption, resulting in reinforced dynamic arsenic adsorption. Ultimately, the intrinsically intensified oxidative pathways for arsenic by OV were elucidated. Following the oxygen temperature programming desorption (O2-TPD) and Mars-Maessen mechanism, OV facilitates the migration of surface lattice oxygen and reestablishes transport channels for bulk lattice oxygen, effectively lowering the rate-determining step energy barrier (exceeding 2.066 eV) and promoting the oxidation of As3 + to As5+. These findings demonstrate that oxygen vacancy engineering can be effectively implemented in developing and utilizing efficient gaseous arsenic sorbents at both macroscopic and atomic levels.
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