Interfacial Thermal Transport and Energy Dissipation in Multilayer PdSe₂ Field Effect Transistors.

Area of Science:

• Materials Science
• Condensed Matter Physics
• Nanotechnology

Background:

• Miniaturization of 2D electronic circuits increases power density, causing heat issues.
• Thermal breakdown in 2D semiconductor field-effect transistors (FETs) challenges optimal performance.
• Understanding energy dissipation is crucial for advanced electronic devices.

Purpose of the Study:

• Investigate energy dissipation in multilayer palladium diselenide (PdSe2) field-effect transistors (FETs) for the first time.
• Analyze high-field breakdown behavior and thermal properties of PdSe2 FETs.
• Provide insights for designing high-performance PdSe2 electronic and optoelectronic devices.

Main Methods:

• Fabrication and characterization of multilayer PdSe2 FETs on SiO2/Si substrates.
• High-field electrical breakdown measurements to determine current density limits.
• Raman thermometry to measure thermal boundary conductance (TBC) at the PdSe2/SiO2 interface.

Main Results:

• PdSe2 FETs exhibit a maximum current density of approximately 2.74 MA cm⁻², comparable to black phosphorus FETs and five times higher than MoS2 FETs.
• The thermal boundary conductance (TBC) at the PdSe2/SiO2 interface is measured to be around 12-13 MW m⁻² K⁻¹.
• This TBC value is relatively low compared to other solid-solid interfaces.

Conclusions:

• PdSe2 FETs demonstrate promising high-current carrying capabilities.
• The low TBC at the PdSe2/SiO2 interface presents an opportunity for performance enhancement.
• Optimizing the thermal interface is key to unlocking the full potential of PdSe2-based devices.