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Film Deposition and Optical Properties of Cu-Based Metal Halide Cs3Cu2(I1- Br )5 Alloy via Mist Deposition
Keisuke Watanabe1, Kosuke Imai1, Hiroyuki Nishinaka2
1Department of Electronics, Kyoto Institute of Technology, Matsugasaki Sakyo-ku, Kyoto 606-8585, Japan.
Abstract:
Cu-based metal halides, such as Cs3Cu2I5, have attracted significant attention as promising candidates for light-emitting diodes, photodetectors, and scintillators owing to their remarkable properties, including high photoluminescence quantum yield (PLQY), air stability, and nontoxicity. In particular, their emissive colors can be controlled by their halogen composition. However, a reliable technique for depositing halogen alloy thin films has not yet been established. Herein, we demonstrated the deposition of Cs3Cu2(I1- Br )5 alloy thin films via mist deposition, offering a scalable one-step method for Cu-based halide applications. X-ray diffraction and energy-dispersive X-ray spectroscopy revealed the successful formation of halogen alloy thin films with precise compositional control by varying the halide precursors. Additionally, alloy thin films formed via mist deposition exhibited high-coverage surfaces. Moreover, they exhibited blue photoluminescence peaks ranging from 440 to 456 nm under ultraviolet irradiation and a high PLQY of approximately 60%, reaching 92.4% for Cs3Cu2I5 thin film. Furthermore, the photoluminescence decay curve exhibited microsecond-order long PL lifetimes indicative of emission from self-trapped excitons. This study represents a significant breakthrough in the development of scalable, high-performance Cu-based metal halide alloy thin films for optical applications.
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