A progressive wafer scale approach for Sub-10 nm nanogap structures.

Area of Science:

• Nanotechnology
• Materials Science
• Quantum Engineering

Background:

• Sub-10nm nanostructures are crucial for quantum properties and next-generation devices.
• Current fabrication methods like electron beam lithography and extreme ultraviolet (EUV) lithography face limitations in speed, area, and cost.

Purpose of the Study:

• To develop an efficient and scalable method for fabricating sub-10nm nanogaps with high uniformity.
• To overcome the limitations of existing nanolithography techniques for broader accessibility.

Main Methods:

• Advanced atomic layer lithography (ALL) using photoresist patterns as protective and sacrificial layers.
• Employed optical and electron microscopy, COMSOL simulations, and terahertz transmission measurements for analysis.

Main Results:

• Achieved highly uniform sub-10nm nanogaps across entire wafer areas.
• Demonstrated enhanced patterning flexibility, a simplified process, and improved metal compatibility compared to original ALL.
• Confirmed nanogap quality and uniformity through comprehensive analyses.

Conclusions:

• The developed ALL method offers a scalable and efficient pathway for sub-10nm nanogap fabrication.
• This technique is compatible with standard lithographic tools and shows potential for both research and industrial applications.
• The streamlined process and enhanced flexibility make it a promising alternative to current high-precision fabrication methods.