MOSFET: Enhancement Mode
MOSFET: Depletion Mode
MOSFET
Field Effect Transistor
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Updated: May 16, 2025

Plasma-assisted Molecular Beam Epitaxy of N-polar InAlN-barrier High-electron-mobility Transistors
Published on: November 24, 2016
Sneha Arora1, Suman Lata Tripathi2, Inung Wijayanto3
1School of Electronics and Electrical Engineering, Lovely Professional University, Phagwara, India.
This study presents a novel low-power pass transistor logic adder (PTLA) using Graphene Nano Ribbon Field Effect Transistors (GNRFETs). The design significantly reduces power consumption and improves performance for AI and edge computing applications.
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