Jove
Visualize
Contact Us

Related Concept Videos

MOSFET: Enhancement Mode01:22

MOSFET: Enhancement Mode

248
Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no...
248
MOSFET: Depletion Mode01:20

MOSFET: Depletion Mode

287
Depletion-mode MOSFETs represent a unique subset of MOSFET technology, functioning fundamentally differently from their enhancement-mode counterparts. Unlike enhancement MOSFETs, which require a positive gate-source voltage (Vgs) to turn on, depletion-mode MOSFETs are inherently conductive and "normally on" devices.
The primary characteristic of depletion-mode MOSFETs is their ability to conduct current between the drain and source terminals without gate bias. This inherent conductivity...
287
MOSFET01:16

MOSFET

391
The Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) plays a pivotal role in modern electronics thanks to its versatility and efficiency in controlling electrical currents. This device, also known as IGFET, MISFET, and MOSFET, has three main terminals: the Source, Drain, and Gate. MOSFETs are classified into n-channel or p-channel types based on the doping characteristics of their substrate and the source or drain regions.
In an n-MOSFET, the structure includes n-type source and drain...
391
Field Effect Transistor01:29

Field Effect Transistor

264
Field-effect transistors (FETs) are integral to electronic circuits and distinguished by their three-terminal setup: the gate, drain, and source. These transistors operate as unipolar devices, which utilize either electrons or holes as charge carriers, in contrast to bipolar transistors, which use both types of carriers. The primary function of the FET is to modulate the flow of these carriers from the source to the drain through a channel. The voltage difference between the gate and source...
264

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by
Same author

Electron Attachment-Induced Shape Resonances in AT Base Pairs.

The journal of physical chemistry. A·2026
Same author

Efficient computation and design of high speed double precision Vedic multiplier architecture.

Scientific reports·2026
Same author

Smart assistive technologies for neurodisorders: A review on AI, IoT, and wearable systems for enhanced patient care.

Neurological sciences : official journal of the Italian Neurological Society and of the Italian Society of Clinical Neurophysiology·2026
Same author

High performance and low leakage heterojunction 10 nm PZT NC-FinFET for low power application.

Scientific reports·2025
Same author

Effect of protein environment on the shape resonances of RNA pyrimidine nucleobases: Insights from a model system.

The Journal of chemical physics·2025
Same author

Design and analysis of NC-FinFET using Pb(Zr<sub>y</sub>Ti<sub>1-y</sub>)O<sub>3</sub> under high ionising radiations.

Scientific reports·2025
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Related Experiment Video

Updated: May 16, 2025

Plasma-assisted Molecular Beam Epitaxy of N-polar InAlN-barrier High-electron-mobility Transistors
10:31

Plasma-assisted Molecular Beam Epitaxy of N-polar InAlN-barrier High-electron-mobility Transistors

Published on: November 24, 2016

8.5K

Efficient 22 nm GNRFET PTLA using low power trimode technique for high speed processor.

Sneha Arora1, Suman Lata Tripathi2, Inung Wijayanto3

  • 1School of Electronics and Electrical Engineering, Lovely Professional University, Phagwara, India.

Scientific Reports
|April 3, 2025
PubMed
Summary

This study presents a novel low-power pass transistor logic adder (PTLA) using Graphene Nano Ribbon Field Effect Transistors (GNRFETs). The design significantly reduces power consumption and improves performance for AI and edge computing applications.

Keywords:
Graphene nano ribbon FETHybrid full adder (HFA)Pass transistor logicPower delay productSynopsys HSPICETrimode technique

More Related Videos

Fabrication of Flexible Image Sensor Based on Lateral NIPIN Phototransistors
09:59

Fabrication of Flexible Image Sensor Based on Lateral NIPIN Phototransistors

Published on: June 23, 2018

7.7K
Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping
14:58

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping

Published on: June 3, 2015

14.4K

Related Experiment Videos

Last Updated: May 16, 2025

Plasma-assisted Molecular Beam Epitaxy of N-polar InAlN-barrier High-electron-mobility Transistors
10:31

Plasma-assisted Molecular Beam Epitaxy of N-polar InAlN-barrier High-electron-mobility Transistors

Published on: November 24, 2016

8.5K
Fabrication of Flexible Image Sensor Based on Lateral NIPIN Phototransistors
09:59

Fabrication of Flexible Image Sensor Based on Lateral NIPIN Phototransistors

Published on: June 23, 2018

7.7K
Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping
14:58

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping

Published on: June 3, 2015

14.4K

Area of Science:

  • Electrical Engineering
  • Computer Engineering
  • Materials Science

Background:

  • Traditional CMOS logic faces limitations in power efficiency for advanced computing.
  • Graphene Nano Ribbon Field Effect Transistors (GNRFETs) offer superior carrier mobility and thermal stability.
  • Pass transistor logic (PTL) enables transistor count optimization in circuit design.

Purpose of the Study:

  • To introduce a new low-power pass transistor logic adder (PTLA) design.
  • To leverage 22nm GNRFET technology for enhanced computing performance.
  • To optimize power consumption, delay, and area using a trimode technique.

Main Methods:

  • Design of 24T PTLA and 21T PTLA configurations using pass transistor logic.
  • Integration of a low-power trimode technique for dynamic operational state management.
  • Performance evaluation under varying Process Voltage Temperature (PVT) conditions and Monte Carlo analysis.
  • Extensive Synopsys HSPICE simulations for optimization and validation.

Main Results:

  • The 24T PTLA design achieved a 99.9% reduction in power and a 99.5% reduction in Power-Delay Product (PDP) compared to conventional logic.
  • The 21T PTLA design demonstrated a 99.6% enhancement in delay stability and a 99.8% reduction in leakage current.
  • The GNRFET-based PTLA exhibits high carrier mobility and temperature resilience.
  • Validated adaptability and reliability through PVT and Monte Carlo simulations.

Conclusions:

  • The proposed GNRFET-based PTLA designs offer substantial improvements in energy efficiency and performance.
  • These designs are highly suitable for power-constrained applications like AI-enabled devices and edge computing.
  • The trimode technique further enhances energy efficiency by dynamically managing operational states.