Solution-processable and photo-programmable logic gate realized by organic non-volatile floating-gate photomemory

Area of Science:

• Organic electronics
• Photonic integrated circuits
• Neuromorphic computing

Background:

• Programmable inverters utilize non-volatile floating-gate photomemories, offering photon-controlled threshold voltage for integrated circuits.
• Organic photo-controllable inverters face challenges in solubility for film stacking and device immaturity.
• Organic non-volatile floating-gate photomemories (ONVFGPs) with n-type layers lag behind p-type due to material limitations.

Purpose of the Study:

• To develop advanced organic non-volatile floating-gate photomemories (ONVFGPs) with efficient n-type charge transport.
• To create photo-programmable inverters with tunable output states for integrated optoelectronic applications.
• To explore solution-processable materials for system-on-chip and neuromorphic computing.

Main Methods:

• Employed photo-crosslinkable polystyrene-block-poly(methacrylic acid) (PS-b-PMAA)/zinc tetraphenylporphine (ZnTPP) as the charge-trapping layer.
• Utilized ZnTPP's participation in photo-induced charge transfer from both first and second excited states.
• Fabricated and characterized photo-programmable inverters demonstrating broad spectral tunability.

Main Results:

• Achieved a state-of-the-art photo-programming time of 0.1 second for ONVFGPs.
• Demonstrated fine-tuning of inverter transfer curves across a wide spectrum (405 nm to 830 nm).
• Attained at least six distinct output states for a single input signal, showcasing multi-state functionality.

Conclusions:

• Confirmed the feasibility of integrated organic optoelectronics using novel photomemory devices.
• Paved the way for solution-processable system-on-chip, neuromorphic computing, and photonic integrated circuits.
• Highlighted the potential of ZnTPP-based charge-trapping layers for high-performance organic electronics.