Size-Dependent Quantum Confined Stark Effect in Quantum Dot Light-Emitting Diodes: An Electrically Excited Transient Absorption Study
Related Experiment Video
Updated: May 15, 2025

Resonance Fluorescence of an InGaAs Quantum Dot in a Planar Cavity Using Orthogonal Excitation and Detection
Published on: October 13, 2017
Xingzhi Wang1, Jiahui Sun2, Rui Guo2
1CAS Key Laboratory of Microscale Magnetic Resonance, School of Physical Sciences, Hefei National Laboratory, and Anhui Province Key Laboratory of Scientific Instrument Development and Application, University of Science and Technology of China, Hefei 230026, China.
Abstract:
The electric field-induced quantum confined Stark effect is an important factor that can affect the performance of quantum dot light-emitting diodes. However, probing this Stark effect in the operating quantum dot light-emitting diodes is still experimentally challenging using available characterization techniques. Herein we combine our self-developed electrically excited transient absorption spectroscopy with theoretical simulation to unveil the complex size dependence of the Stark effect in quantum dot light-emitting diodes. We found that the Stark effect-induced exciton quenching depends on both wave function confinement and the screening effect. Under reversed biases, the Stark-voltage relationship reveals that smaller quantum dots are less electric field-sensitive because of stronger wave function confinement; while under forward biases, larger quantum dots exhibit stronger electric-field screening and smaller equivalent bias because of more efficient carrier injection─with these intertwined factors, we observed the strongest electric field-induced exciton quenching in medium-size quantum dots.

