Related Experiment Video
Updated: May 15, 2025

Monovalent Cation Doping of CH3NH3PbI3 for Efficient Perovskite Solar Cells
Published on: March 19, 2017
Pulsed operation of perovskite LEDs: a study on the role of mobile ions
Miguel A Torre Cachafeiro1,2, Naresh Kumar Kumawat3,4, Feng Gao4
1Institute of Computational Physics, School of Engineering, Zurich University of Applied Sciences (ZHAW), Winterthur 8400, Switzerland.
Abstract:
Metal halide perovskite light-emitting diodes (PeLEDs) are a promising technology for energy-efficient and cost-effective lighting and displays, thanks to their tunable color emission, high brightness, color purity and low-temperature fabrication. However, the mixed ionic-electronic conductivity of perovskite materials presents unique challenges, as ionic defects can redistribute under operation, affecting the energy landscape and charge recombination mechanisms. Our drift-diffusion simulations establish a connection between the transient electroluminescence (TrEL) signals of PeLEDs under pulsed operation and the influence of mobile ions. We find that the TrEL plateau value's dependence on the duty cycle and end-of-pulse overshoot can be explained by the time-varying distribution of ionic defects. The inclusion of mobile ions is crucial to understand the TrEL response. Moreover, the simulations highlight injection barriers at the perovskite/charge-transport layer interfaces, such as is the case for the hole transport layer in our example, as a significant source of non-radiative charge recombination. These findings contribute to the understanding of transient ionic processes in perovskite-based devices.
More Related Videos
08:12Low Pressure Vapor-assisted Solution Process for Tunable Band Gap Pinhole-free Methylammonium Lead Halide Perovskite Films
Published on: September 8, 2017
11:38Influence of Hybrid Perovskite Fabrication Methods on Film Formation, Electronic Structure, and Solar Cell Performance
Published on: February 27, 2017
Related Concept Videos
P-N junction
Biasing of P-N Junction
In equilibrium, no external voltage is applied across the p-n junction. The depletion region is formed at the junction interface due to the diffusion of carriers, which leaves behind charged dopants, acceptors on the p-side, and donors on the n-side. These immobile charges create an electric field that prevents further diffusion of carriers. The related energy band...