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Updated: May 15, 2025

Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures
Published on: December 5, 2015
Electric field-driven the electronic properties and contact behavior of the metal/semiconductor NbS2/Sc2CF2
Thi Nhan Tran1, Pham T Truong2,3, Huynh V Phuc2
1Faculty of Fundamental Sciences, Hanoi University of Industry, 298 Cau Dien, Bac Tu Liem, Hanoi 100000, Vietnam. tran.nhan@haui.edu.vn.
Abstract:
In this work, we theoretically designed a metal/semiconductor heterostructure composed of two-dimensional (2D) NbS2 metal and 2D Sc2CF2 semiconductor and investigated its properties using first-principles calculations. Our results reveal that this heterostructure is energetically stable and forms a p-type Schottky contact with a small barrier of approximately 0.35 eV. Additionally, it exhibits excellent interfacial characteristics, including a weak Fermi level pinning and low contact resistance, making it a promising candidate for next-generation electronic and optoelectronic devices. Notably, our findings demonstrate that the electronic properties and contact characteristics of the NbS2/Sc2CF2 heterostructure can be effectively tuned by an external electric field. The electric field can induce a transition from a p-type to an n-type contact and from a Schottky to an Ohmic contact, highlighting its potential for tunable nanoelectronic applications.
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