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Published on: July 21, 2018
Polarization-Sensitive and Self-Driven Photodetector Based on 2D PdSe2/InSe Asymmetric van der Waals Heterojunction
Yu-An Du1, Sixian He1, Chengdong Yin1
1State Key Laboratory of Metal Matrix Composites, School of Materials Science and Engineering, Shanghai Jiao Tong University Shanghai 200240, P. R. China.
Abstract:
Polarized photodetectors are promising in civil and military fields. Limited response range and low integration level are critical challenges which can be solved by the introduction of a 2D asymmetric vertical heterojunction. Vertical structure design has the advantages of higher integration level and shorter channel length. In this work, a PdSe2/InSe vertical heterojunction is constructed with an asymmetric structure and a short vertical transportation channel for polarization-sensitive and self-driven photodetection. The device exhibits excellent photoresponse characteristics, including a wide spectral range spanning from 405 to 980 nm, a high responsivity of 296 mA/W, and a specific detectivity of 1.97 × 1011 Jones. It also demonstrates excellent photovoltaic performance with a notable open-circuit voltage reaching 480.6 mV and exhibits remarkable polarization sensitivity. Finally, the device is integrated into a polarized light imaging system successfully. This finding underscores the critical role of the PdSe2/InSe heterojunction in advancing compact, high-performance, broadband, and self-driven polarized photodetectors.
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