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Tuning Hot-Carrier Temperature in CsPbBr3 Perovskite Nanoplatelets through Metal Halide Passivation
Srimanta Gogoi1, Saikat Das1, Ruchir Gupta1
1Spectroscopy and Dynamics Visualization Laboratory, Department of Chemistry, Indian Institute of Science Education and Research Bhopal, Bhopal 462066, Madhya Pradesh, India.
Abstract:
High carrier temperature and slow carrier cooling make perovskite nanostructures potential candidates for hot-carrier solar cells. Here, using time-resolved photoluminescence spectroscopy, hot-carrier dynamics is reported in strongly confined three-monolayer quasi-2D CsPbBr3 perovskite nanoplatelets characterized by sharp excitonic peaks in the absorption spectrum and narrow emission peaks in the blue region. Treatment with a PbBr2-ligand solution resulted in a remarkable seven-fold increase in photoluminescence intensity, attributed to effective passivation of surface defects due to lead(II) and bromide vacancies. Further investigations using time-resolved emission spectroscopy revealed consistent carrier cooling times of ∼300 fs for both pristine and treated nanoplatelets, indicating similar fundamental hot-carrier cooling processes. Notably, treated nanoplatelets exhibited higher carrier temperature (∼700 K), linked to increased radiative carrier density after defect passivation. This work demonstrates that treatment of quasi-2D CsPbBr3 perovskite nanoplatelets with metal halides substantially improves the optoelectronic properties. Notably, hot-carrier temperatures can be increased significantly while preserving the cooling time.
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