Low-temperature electron-electron interaction correction to the anomalous Hall effect in Fe3GaTe2single crystals

Yihui Dong1, Xiuming Long1, Xiaowei Lv2

  • 1Materials Genome Institute, Institute for Quantum Science and Technology, Shanghai Engineering Research Center for Integrated Circuits and Advanced Display Materials, Shanghai University, Shanghai 200444, People's Republic of China.

Summary

Electron-electron interactions (EEI) impact resistivity in metals. This study shows EEI significantly affects the anomalous Hall effect (AHE) in Fe3GaTe2, challenging existing theories for magnetic materials.

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