Molecular Interlayer for High-Performance and Stable 2D Tin Halide Perovskite Transistor.

Area of Science:

• Materials Science
• Electronics
• Nanotechnology

Background:

• Tin (Sn) halide perovskites show promise for p-channel field-effect transistors (FETs) due to favorable electronic properties.
• Intrinsic instability of Sn perovskites hinders their practical application and performance.
• Surface defects and interface energy barriers limit carrier transport and device stability.

Purpose of the Study:

• To design molecular interlayers for Sn perovskite FETs.
• To passivate surface defects and improve film formation.
• To reduce interface energy barriers and enhance carrier transport.

Main Methods:

• Development of functionalized molecular interlayers.
• Application of interlayers to Sn perovskite films.
• Fabrication and characterization of p-channel FET devices.
• Evaluation of device performance, stability, and surface properties.

Main Results:

• Molecular interlayers effectively passivated surface defects, improving film quality.
• Interlayers reduced energy barriers at source/drain interfaces, enhancing carrier mobility.
• Achieved high effective mobility (> 11 cm² V^-1 s^-1) and on/off ratio (> 1.3 × 10⁷).
• Demonstrated exceptional device durability, reproducibility, and superior storage stability due to hydrophobic nature.

Conclusions:

• Molecular interlayers are crucial for overcoming Sn perovskite instability.
• The designed interlayers synergistically enhance performance and stability of Sn perovskite FETs.
• This approach offers a viable pathway for developing robust and high-performance Sn perovskite electronic devices.