Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Related Concept Videos

Non-ohmic Devices00:51

Non-ohmic Devices

1.0K
In most substances, the current flow is proportional to the voltage applied to it. A simple relationship between the values of current, voltage, and resistance is known as Ohm's law. Nonohmic devices do not exhibit a linear relationship between voltage and current. One such device is the semiconducting circuit element known as a diode. A diode is a circuit device that allows current flow in only one direction.
Consider a simple circuit consisting of a battery, a diode, and a resistor. A...
1.0K
P-N junction01:11

P-N junction

416
A p-n junction is formed when p-type and n-type semiconductor materials are joined together. At the interface of the p-n junction, holes from the p-side and electrons from the n-side begin to diffuse into the opposite sides due to the concentration gradient. This diffusion of carriers leads to a region around the junction where there are no free charge carriers, known as the depletion region. The charge density within the depletion region for the n-side and p-side can be described by the...
416
Propagation of Action Potentials01:23

Propagation of Action Potentials

4.9K
The propagation of an action potential refers to the process by which a nerve impulse, or "action potential," travels along a neuron.
Neurons (nerve cells) have a resting membrane potential, with a slightly negative charge inside compared to outside. This is maintained by ion channels, such as sodium (Na+) and potassium (K+) channels, which control the flow of ions. When a stimulus, like a touch or a signal from another neuron, triggers the neuron, sodium channels open, allowing sodium ions to...
4.9K

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by
Same author

Gate-Tunable Floquet Weyl Photon Emission from Topological Dirac Semimetal Cd<sub>3</sub>As<sub>2</sub>.

Advanced materials (Deerfield Beach, Fla.)·2026
Same author

Deep Learning Inverse Design of Phase-Change Reconfigurable Terahertz Metadevices for Multidimensional Secure Communication.

Advanced materials (Deerfield Beach, Fla.)·2026
Same author

Ferron-driven photoferroic hysteresis in van der Waals CuInP<sub>2</sub>S<sub>6</sub>.

Nature communications·2026
Same author

Iodine-catalyzed isomerization of enamides.

Organic & biomolecular chemistry·2026
Same author

Bellman error centering.

Neural networks : the official journal of the International Neural Network Society·2026
Same author

Deciphering the Impact of Protein Corona on Biological Fate of Nanomedicine-Loaded Microneedles.

Current drug metabolism·2026

Related Experiment Video

Updated: May 15, 2025

Generation and Coherent Control of Pulsed Quantum Frequency Combs
06:42

Generation and Coherent Control of Pulsed Quantum Frequency Combs

Published on: June 8, 2018

8.9K

On-Chip Active Non-Reciprocal Topological Photonics.

Ridong Jia1,2, Thomas Caiwei Tan1,2, Sobhan Subhra Mishra1,2

  • 1Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore, 637371, Singapore.

Advanced Materials (Deerfield Beach, Fla.)
|April 10, 2025
PubMed
Summary

Researchers developed a novel non-reciprocal topological silicon chip using Indium Antimonide (InSb). This breakthrough enables compact, efficient photonic devices with high isolation for advanced technologies.

Keywords:
active non‐reciprocitynon‐reciprocal critical coupling stateon‐chip integrated isolatorsilicon photonicsterahertz topological isolatorterahertz topological photonic integrated circuitstopological cavitytopological non‐reciprocitytopological waveguide

More Related Videos

High-Throughput Total Internal Reflection Fluorescence and Direct Stochastic Optical Reconstruction Microscopy Using a Photonic Chip
14:09

High-Throughput Total Internal Reflection Fluorescence and Direct Stochastic Optical Reconstruction Microscopy Using a Photonic Chip

Published on: November 16, 2019

6.8K
Measurement of Quantum Interference in a Silicon Ring Resonator Photon Source
12:19

Measurement of Quantum Interference in a Silicon Ring Resonator Photon Source

Published on: April 4, 2017

8.3K

Related Experiment Videos

Last Updated: May 15, 2025

Generation and Coherent Control of Pulsed Quantum Frequency Combs
06:42

Generation and Coherent Control of Pulsed Quantum Frequency Combs

Published on: June 8, 2018

8.9K
High-Throughput Total Internal Reflection Fluorescence and Direct Stochastic Optical Reconstruction Microscopy Using a Photonic Chip
14:09

High-Throughput Total Internal Reflection Fluorescence and Direct Stochastic Optical Reconstruction Microscopy Using a Photonic Chip

Published on: November 16, 2019

6.8K
Measurement of Quantum Interference in a Silicon Ring Resonator Photon Source
12:19

Measurement of Quantum Interference in a Silicon Ring Resonator Photon Source

Published on: April 4, 2017

8.3K

Area of Science:

  • Integrated Photonics
  • Topological Photonics
  • Materials Science

Background:

  • Chip-scale non-reciprocity is crucial for photonic circulators and isolators in data communication, signal modulation, and quantum computing.
  • Existing silicon chips face challenges in achieving small footprints, high isolation, low loss, and active control for non-reciprocity.

Purpose of the Study:

  • To report a non-reciprocal topological silicon chip utilizing magneto-optical Indium Antimonide (InSb) integrated with a valley Hall system.
  • To demonstrate ultra-compact and efficient non-reciprocal photonic devices by realizing valley-conserved non-reciprocal modes.

Main Methods:

  • Integration of magneto-optical Indium Antimonide (InSb) with a silicon valley Hall system.
  • Breaking time-reversal and spatial-inversion symmetries to achieve valley-conserved non-reciprocal modes.
  • Fine-tuning topological cavity critical coupling points for device optimization.

Main Results:

  • Experimental achievement of a maximum isolation ratio of 64.3 dB and a low chip loss of 2.6 dB.
  • Demonstration of a small footprint (6.4 × 2.5λ²) for the non-reciprocal topological silicon chip.
  • Active modulation of the isolation ratio from 0 to 48 dB using an all-optical method.

Conclusions:

  • The developed non-reciprocal topological silicon chip offers superior performance compared to conventional devices.
  • This advancement is pivotal for integrated photonics, enabling next-generation communication systems, LiDAR, terahertz technologies, quantum computing, and cryptography.