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Related Experiment Video

Updated: May 15, 2025

Fabricating van der Waals Heterostructures with Precise Rotational Alignment

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Published on: July 5, 2019

Homopolar Chemical Bonds Induce In-Plane Anisotropy in Layered Semiconductors.

Jieling Tan¹, Jiang-Jing Wang¹, Hang-Ming Zhang¹

¹Center for Alloy Innovation and Design (CAID) State Key Laboratory for Mechanical Behavior of Materials Xi'an Jiaotong University Xi'an 710049 China.

|April 11, 2025

Summary

Researchers uncovered the origin of anisotropy in gallium monotelluride (m-GaTe) layered semiconductors. Distorted vertical gallium-gallium bonds strengthen, inducing strong in-plane anisotropy, a feature also found in similar van der Waals materials.

Keywords:

atomic‐scale imaging chemical‐bonding mechanisms homopolar bonds in‐plane anisotropy layered semiconductor

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Area of Science:

Materials Science
Solid-State Physics
Nanotechnology

Background:

Layered binary semiconductors, especially III-VI alloys like gallium telluride (GaTe), are gaining attention for applications.
Monoclinic gallium monotelluride (m-GaTe) exhibits anisotropic properties beneficial for photodetectors, phototransistors, and electronic memory devices.
The fundamental reasons behind m-GaTe's anisotropy, particularly its structural and bonding characteristics in nanostructures, require deeper understanding.

Purpose of the Study:

To comprehensively characterize the atomic-scale structure of m-GaTe.
To directly measure the in-plane anisotropy at the sub-Angstrom level.
To elucidate the relationship between atomic bonding and observed anisotropy in m-GaTe and similar materials.

Main Methods:

Element-resolved atomic-scale microscopy for direct experimental characterization.
First-principles modeling to simulate and compare with experimental results.
Quantum-chemical bonding analyses to investigate atomic interactions within layers.

Main Results:

Experimental atomic-scale images successfully captured and quantified in-plane anisotropy.
First-principles modeling results showed good agreement with experimental observations.
Quantum-chemical analysis revealed that distorted and rotated vertical Ga-Ga homopolar bonds are key to the strong in-plane anisotropy.

Conclusions:

The study provides a detailed atomic-level understanding of anisotropy in m-GaTe.
Homopolar bond distortion is identified as the primary mechanism driving in-plane anisotropy in m-GaTe.
A systematic materials screening suggests this anisotropy mechanism is prevalent in other low-symmetric layered van der Waals materials with similar structural motifs.