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Current Transients in Graphene Electronics under Single-Particle Irradiation.
Wanzhen He1, Linxin Zhai1, Chi-Yung Yam2
1Applied Mechanics Laboratory Department of Engineering Mechanics Tsinghua University Beijing 100084 China.
Single hydrogen irradiation impacts graphene electronics, affecting peak current differently than energy loss. Delocalized plasmonic excitation, not localized electronic excitation, drives current transients in these low-dimensional materials.
Area of Science:
- Materials Science
- Condensed Matter Physics
- Nanoscience
Background:
- Low-dimensional materials are crucial for advanced electronics.
- Device performance is vulnerable to environmental factors like irradiation.
- Graphene's susceptibility to irradiation necessitates understanding its electronic behavior.
Purpose of the Study:
- To investigate the effects of single hydrogen irradiation on graphene electronics.
- To analyze the energy and site-dependent behavior of current transients.
- To elucidate the underlying mechanisms driving current changes and stopping power.
Main Methods:
- Development of real-time time-dependent density-functional theory (RT-TDDFT) for open systems.
- Application of Ehrenfest dynamics for ionic motion.
- Simulation of single-hydrogen irradiation on graphene.
Main Results:
- Peak current exhibits unique energy and site dependencies, differing from stopping power.
- Current transients are primarily driven by delocalized plasmonic excitation.
- Site dependence of current is influenced by local electron density and ionic charges.
Conclusions:
- Lattice discreteness and electronic structure significantly impact irradiation effects in graphene.
- Findings challenge previous theoretical models by highlighting overlooked material properties.
- Provides a foundation for designing graphene nanoelectronics for space environments.
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