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Related Concept Videos

Characteristics of Series Resonant Circuit01:24

Characteristics of Series Resonant Circuit

198
Series resonance occurs in a circuit containing inductive (L), capacitive (C), and resistive (R) elements connected sequentially. At the resonance frequency, the inductive and capacitive reactances are equal in magnitude but opposite in sign, effectively canceling each other. This causes the circuit's impedance is minimal, primarily determined by the resistance R. The resonant frequency of an RLC circuit is defined as:
198
Parallel Resonance01:23

Parallel Resonance

176
The parallel RLC circuit is an arrangement where the resistor (R), inductor (L), and capacitor (C) are all connected to the same nodes and, as a result, share the same voltage across them. The parallel RLC circuit is analyzed in terms of admittance (Y), which reflects the ease with which current can flow. The admittance is given by:
176
Infrared (IR) Spectroscopy: Overview01:09

Infrared (IR) Spectroscopy: Overview

1.4K
When electromagnetic radiation passes through a material, atoms or molecules transition from a lower to a higher energy state by absorbing radiation corresponding to the energy difference between the two states. The absorption of infrared (IR) radiation causes transitions between vibrational energy levels in a molecule. Therefore, IR spectroscopy is a useful analytical tool for determining the molecular structure of molecules.
Different compounds display unique properties due to their...
1.4K
IR Frequency Region: Fingerprint Region01:03

IR Frequency Region: Fingerprint Region

665
IR spectra are divided into two main regions: the diagnostic region and the fingerprint region. The diagnostic region of the spectrum lies above 1500 cm−1. The absorptions resulting from single-bond vibrations of the N–H, C–H, and O–H stretch at higher wavenumbers and appear on the left side of the spectrum. The stretching absorptions of the C≡C and C≡N occur between 2100–2300 cm−1. In contrast, those arising from stretching absorptions of the...
665
Resonance in an AC Circuit01:26

Resonance in an AC Circuit

2.0K
The property of an inductor makes it resist any change in the current passing through it, while the property of a capacitor is to build up the charge across its terminals. Hence, if an inductor and capacitor are connected in series, they have opposite effects on the relative phase between current and voltage. The current through the circuit undergoes forced oscillation at the frequency of the source. The resistance term in an R-L-C circuit acts as a damping term because power is dissipated...
2.0K
Series Resonance01:17

Series Resonance

139
The RLC circuit impedance is defined as the ratio of the supply voltage to the circuit current. Resonance in such a circuit occurs when the imaginary part of this impedance equals zero. This specific condition means that the inductive reactance is exactly equal to the capacitive reactance. The frequency at which this happens is known as the resonant frequency. Mathematically, the resonant frequency is inversely proportional to the square root of the product of the inductance (L) and capacitance...
139

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Related Experiment Video

Updated: May 15, 2025

Fabrication of Silica Ultra High Quality Factor Microresonators
07:51

Fabrication of Silica Ultra High Quality Factor Microresonators

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One million quality factor integrated ring resonators in the mid-infrared.

Marko Perestjuk1,2, Rémi Armand1, Miguel Gerardo Sandoval Campos1

  • 1Ecole Centrale de Lyon, INSA Lyon, CNRS, Universite Claude Bernard Lyon 1, CPE Lyon, INL, UMR5270, 69130 Ecully, France.

Nanophotonics (Berlin, Germany)
|April 11, 2025
PubMed
Summary

Silicon Germanium ring resonators achieve quality factors up to one million in the mid-infrared. This breakthrough positions Silicon Germanium as a leading platform for integrated photonics, demonstrated by resonance splitting and optical bistability.

Keywords:
integrated photonicsmid-infraredresonatorssilicon germanium

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Last Updated: May 15, 2025

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Area of Science:

  • Integrated Photonics
  • Mid-Infrared Optics
  • Materials Science

Background:

  • Mid-infrared (MIR) integrated photonics is crucial for sensing and spectroscopy.
  • Silicon photonics platforms face limitations in the MIR due to silicon's optical losses.
  • Silicon Germanium (SiGe) on Silicon offers a promising alternative for MIR applications.

Purpose of the Study:

  • To demonstrate high-quality factor (Q-factor) ring resonators on a SiGe-on-Si platform.
  • To operate these resonators in the critical 3.5-4.6 µm wavelength range.
  • To validate the performance through observable optical phenomena.

Main Methods:

  • Fabrication of SiGe-on-Si ring resonators using advanced lithography and etching techniques.
  • Characterization of resonator performance in the 3.5-4.6 µm spectral region.
  • Analysis of resonance splitting (degeneracy lifting) and optical bistability.

Main Results:

  • Achieved record high Q-factors exceeding one million for SiGe ring resonators.
  • Demonstrated stable operation and high performance in the target mid-infrared wavelengths.
  • Confirmed high Q-factors via clear observation of clockwise (CW) and counter-clockwise (CCW) resonance degeneracy lifting.
  • Observed optical bistability, indicative of significant optical power buildup within the resonators.

Conclusions:

  • The SiGe-on-Si platform is highly suitable for high-performance mid-infrared integrated photonics.
  • The demonstrated Q-factors rival those of other advanced photonic platforms.
  • This work establishes SiGe as a leading material for future MIR photonic integrated circuits.