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Mechanically Exfoliated InP Thin Films for Solar Energy Conversion Devices
Bikesh Gupta1, Parul1, Yonghwan Lee2
1Department of Electronic Materials Engineering Research School of Physics The Australian National University Canberra ACT 2600 Australia.
Small Science
|April 11, 2025
Summary
Controlled spalling offers a cost-effective method for producing thin films of indium phosphide (InP) semiconductors. These films enable efficient solar cells and photoanodes, advancing solar energy conversion technology.
Area of Science:
- Materials Science
- Renewable Energy
- Semiconductor Physics
Background:
- III-V semiconductors are ideal for solar energy conversion due to their bandgap but are costly.
- Thin-film approaches can mitigate the high cost of III-V semiconductors.
- Developing cost-effective methods for thin-film III-V semiconductor fabrication is crucial for widespread adoption.
Purpose of the Study:
- To demonstrate a novel, cost-effective mechanical exfoliation technique (controlled spalling) for producing thin films of III-V semiconductors.
- To validate the optoelectronic properties of exfoliated indium phosphide (InP) films.
- To fabricate and assess the performance of solar energy conversion devices using these thin films.
Main Methods:
- Mechanical exfoliation (controlled spalling) was employed to obtain 15 μm thick InP films.
- Cathodoluminescence and photoluminescence spectroscopy were used for material characterization.
- InP thin-film heterojunction solar cells and InP photoanodes with NiFeOOH catalyst were fabricated.
Main Results:
- Successful exfoliation of 15 μm thick InP films without compromising optoelectronic properties.
- Fabricated InP thin-film solar cells achieved power conversion efficiencies exceeding 13%.
- Developed InP photoanodes demonstrated a photocurrent density of 19.3 mA cm⁻² at 1.23 V RHE and ≈4% applied bias photon-to-current efficiency.
Conclusions:
- Controlled spalling is an effective and economical technique for producing high-quality III-V semiconductor thin films.
- This method facilitates the development of cost-effective and efficient solar energy conversion devices based on III-V semiconductors.
- The study highlights the potential of thin-film InP for advanced solar energy applications.

