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1/f Noise and Machine Intelligence in a Nonlinear Dopant Atom Network
Tao Chen1, Peter A Bobbert1,2, Wilfred G van der Wiel1
1NanoElectronics Group MESA+ Institute for Nanotechnology and BRAINS Center for Brain-Inspired Nano Systems University of Twente PO Box 217 Enschede AE 7500 The Netherlands.
Abstract:
Noise exists in nearly all physical systems ranging from simple electronic devices such as transistors to complex systems such as neural networks. To understand a system's behavior, it is vital to know the origin of the noise and its characteristics. Recently, it was shown that the nonlinear electronic properties of a disordered dopant atom network in silicon can be exploited for efficiently executing classification tasks through "material learning." Here, we study the dopant network's intrinsic 1/f noise arising from Coulomb interactions, and its impact on the features that determine its computational abilities, viz., the nonlinearity and the signal-to-noise ratio (SNR), is investigated. The findings on optimal SNR and nonlinear transformation of data by this nonlinear network provide a guideline for the scaling of physical learning machines and shed light on neuroscience from a new perspective.
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