Enhanced Optoelectronic Response of TiO₂ Photodetector Sensitized via CuInSe₂ Quantum Dots

Colloidal copper-based chalcogenide quantum dots (QDs), particularly lead-free CuInSe₂ systems, have emerged as promising photosensitizers for optoelectronic de-vices due to their high extinction coefficients and solution processability. In this work, we demonstrate a TiO₂ photodetector enhanced through interfacial engineering with the size of 9.88 ± 2.49 nm CuInSe₂ QD_s, synthesized via controlled thermal injection. The optimized device architecture combines a 160 nm TiO₂ active layer with 60 μm horizontal channel electrodes, achieving high performance metrics. The QD-sensitized device demonstrates an impressive switching ratio of approximately 10⁵ in the 405 nm wavelength, a significant 34-times increase in responsivity at a 2 V bias, and a detection rate of 4.17 × 10⁸ Jones. Due to the limitations imposed by the TiO₂ bandgap, the TiO₂ photodetector exhibits a negligible increase in photocurrent at 565 nm. The engineered type-II heterostructure enables responsivity enhancement across an extended spectral range through sensitization while maintaining equivalent performance characteristics at both 405 nm and 565 nm wavelengths. Furthermore, the sensitized architecture demonstrates superior response kinetics, enhanced specific detectivity, and exceptional operational stability, establishing a universal design framework for broadband photodetection systems.