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MOSFET: Enhancement Mode

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Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
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The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
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Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
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MOSFET: Depletion Mode01:20

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Depletion-mode MOSFETs represent a unique subset of MOSFET technology, functioning fundamentally differently from their enhancement-mode counterparts. Unlike enhancement MOSFETs, which require a positive gate-source voltage (Vgs) to turn on, depletion-mode MOSFETs are inherently conductive and "normally on" devices.
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A p-n junction is formed when p-type and n-type semiconductor materials are joined together. At the interface of the p-n junction, holes from the p-side and electrons from the n-side begin to diffuse into the opposite sides due to the concentration gradient. This diffusion of carriers leads to a region around the junction where there are no free charge carriers, known as the depletion region. The charge density within the depletion region for the n-side and p-side can be described by the...
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Standing Waves in a Cavity01:28

Standing Waves in a Cavity

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A household microwave and lasers are examples of standing electromagnetic waves in a cavity. When two conducting metal plates are placed parallel at the nodal planes, it creates a cavity where standing waves are formed. The cavity between the two planes is analogous to a stretched string held at the points x = 0 and x = L. Here, the distance 'L' between the two planes must be an integer multiple of half of the wavelength. The wavelengths that satisfy this condition are given by:
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Updated: May 14, 2025

Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform
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On-Chip Active Supercoupled Topological Cavity.

Ridong Jia1,2, Wenhao Wang1,2, Yi Ji Tan1,2

  • 1Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore, 637371, Singapore.

Advanced Materials (Deerfield Beach, Fla.)
|April 11, 2025
PubMed
Summary
This summary is machine-generated.

This study introduces a novel supercoupled topological cavity for on-chip photonics, enabling excitation over multiple wavelengths. This breakthrough overcomes limitations of traditional evanescent coupling for flexible chip integration.

Keywords:
THz on‐chip cavityTHz topological photonic integrated circuitson‐chip terahertz interconnectsoptothermal controlsupercoupled cavityterahertz interfacial waveguidetopological cavity

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Area of Science:

  • Photonics
  • Integrated Optics
  • Topological Photonics

Background:

  • On-chip photonic resonant cavities are crucial for lasing, sensing, and spectroscopy.
  • Current excitation methods rely on evanescent coupling, limiting integration flexibility.
  • Sub-wavelength coupling distances restrict precise on-chip device placement.

Purpose of the Study:

  • To demonstrate a novel on-chip supercoupled topological cavity.
  • To overcome the limitations of short-range evanescent coupling.
  • To enable excitation of resonant cavities over extended distances.

Main Methods:

  • Utilizing a supercoupling mechanism based on valley vortex flow.
  • Implementing optothermal heating for dynamic control.
  • Achieving critical coupling at 2.3-wavelength distance and excitation up to 3.2 wavelengths.

Main Results:

  • Demonstrated a supercoupled topological cavity with extended excitation range.
  • Achieved critical coupling at 2.3 wavelengths and sustained excitation at 3.2 wavelengths.
  • Showcased tunable quality factors and dynamic control of coupling via optothermal heating.

Conclusions:

  • The supercoupling mechanism significantly extends waveguide-cavity excitation distances.
  • This technology unlocks new possibilities for on-chip resonant device design.
  • Enables advanced supercoupled lasers, sensors, and modulators with enhanced control.