Recent advances in semiconductor nanostructure-based surface-enhanced Raman scattering sensors

Surface-enhanced Raman scattering (SERS) has become a transformative analytical tool, attracting growing interest for its wide-ranging applications. The development of SERS-active materials is now a central research area, spurring innovation in various types of SERS substrates. While noble metal-based substrates remain extensively studied, semiconductor-based, non-metal substrates are garnering attention due to their unique advantages: excellent chemical stability, high carrier mobility, biocompatibility, and precise fabrication control. However, their generally weaker enhancement effects limit their utility, underscoring the need for strategies to boost their SERS activity. Understanding the complex enhancement mechanisms in semiconductor-based SERS substrates is critical for designing next-generation materials with metal-like enhancement factors (EFs). The interplay of charge transfer, localized surface plasmon resonance, and photonic effects makes the enhancement process inherently challenging to unravel. Therefore, the search for new materials with exciting optoelectronic properties, as well as more innovative solutions to increase their SERS sensitivity, continues to grow. In this review, we explore the latest advancements in semiconductor-based SERS substrates, dissecting the complex enhancement mechanisms and various modification strategies aimed at achieving metal-like high EFs. We present a comprehensive analysis of the methods used to improve the SERS performance of semiconductor substrates and conclude with potential future directions for advancing this dynamic field.