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UV-Vis-NIR Broadband Dual-Mode Photodetector Based on Graphene/InP Van Der Waals Heterostructure
Mingyang Shen1,2, Hao Liu1,2, Qi Wang1,2
1State Key Laboratory of Information Photonics and Optical Communications, Beijing University of Posts and Telecommunications, Beijing 100876, China.
Sensors (Basel, Switzerland)
|April 12, 2025
Summary
This study introduces a novel dual-mode photodetector (DmPD) using a graphene/InP heterostructure. This device offers broadband detection and switches between energy-efficient photovoltaic and sensitive photoconductive modes.
Area of Science:
- Optoelectronics
- Materials Science
- Nanotechnology
Background:
- Dual-mode photodetectors (DmPDs) integrate multiple functionalities, but 2D material/InP heterostructures remain underexplored for DmPD applications.
- Existing DmPDs often lack the broadband response and high performance demonstrated by advanced heterostructures.
Purpose of the Study:
- To fabricate and characterize a high-performance DmPD based on a graphene/InP Van der Waals heterostructure.
- To demonstrate the device's capability for multifunctional detection across a broad wavelength range.
- To enable operation in both self-powered photovoltaic and biased photoconductive modes.
Main Methods:
- Fabrication of a graphene/InP Van der Waals heterostructure DmPD using monolayer CVD graphene and an InP substrate.
- Utilizing three electrodes for flexible switching between photovoltaic and photoconductive operational modes.
- Characterization of device performance, including responsivity, detectivity, on/off ratio, and response times.
Main Results:
- Achieved broadband response from UV-visible to near-infrared wavelengths.
- Demonstrated high performance in photovoltaic mode: on/off ratio of 8 × 10^3, responsivity of 49.2 mA/W, detectivity of 4.09 × 10^11 Jones, and ultrafast response (2.8/6.2 μs rise/fall times).
- Achieved enhanced responsivity of 162.5 A/W in photoconductive mode (at 1 V bias) due to the photogating effect.
Conclusions:
- The developed graphene/InP DmPD offers versatile, high-performance multifunctional detection.
- This work paves the way for advanced InP-based optoelectronic devices with integrated functionalities.
- The facile fabrication and dual-mode operation highlight the potential for energy-efficient imaging and sensitive weak light detection.
