Related Experiment Video

Updated: May 13, 2025

Probing C84-embedded Si Substrate Using Scanning Probe Microscopy and Molecular Dynamics
13:58

Probing C84-embedded Si Substrate Using Scanning Probe Microscopy and Molecular Dynamics

Published on: September 28, 2016

11.7K

Investigating topological descriptor and Gibb's energy for semiconducting carbon allotrope through advanced curve

Nasreen Ebrahim Almohanna1, Muhammad Asif2, Khawlah Hamad Alhulwah1

  • 1Department of Mathematics and Statistics, College of Science, Imam Mohammad Ibn Saud Islamic University (IMSIU), Riyadh, 11623, Saudi Arabia.

Scientific Reports
|April 12, 2025
PubMed

Keywords:
Curve fitting modelGibbs energySemiconducting carbon allotrope structureTopological indices (TI)

More Related Videos

Effect of Bending on the Electrical Characteristics of Flexible Organic Single Crystal-based Field-effect Transistors08:43

Effect of Bending on the Electrical Characteristics of Flexible Organic Single Crystal-based Field-effect Transistors

Published on: November 7, 2016

8.0K
Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities11:42

Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities

Published on: July 24, 2015

15.4K

Related Concept Videos

Gibbs Free Energy02:39

Gibbs Free Energy

One of the challenges of using the second law of thermodynamics to determine if a process is spontaneous is that it requires measurements of the entropy change for the system and the entropy change for the surroundings. An alternative approach involving a new thermodynamic property defined in terms of system properties only was introduced in the late nineteenth century by American mathematician Josiah Willard Gibbs. This new property is called the Gibbs free energy (G) (or simply the free...
32.3K
Modeling of Diode Forward Characteristics01:19

Modeling of Diode Forward Characteristics

Understanding the behavior of diodes when forward-biased is a fundamental aspect of electronic circuit design and analysis. This analysis primarily utilizes two models: the exponential diode model and the constant-voltage-drop model. The exponential model comes into play when the source voltage exceeds 0.5 volts, pushing the diode current to rise exponentially above the saturation current. This relationship is graphically depicted in the current-voltage (I-V) curve, illustrating the diode's...
431
Network Covalent Solids02:18

Network Covalent Solids

Network covalent solids contain a three-dimensional network of covalently bonded atoms as found in the crystal structures of nonmetals like diamond, graphite, silicon, and some covalent compounds, such as silicon dioxide (sand) and silicon carbide (carborundum, the abrasive on sandpaper). Many minerals have networks of covalent bonds.
To break or to melt a covalent network solid, covalent bonds must be broken. Because covalent bonds are relatively strong, covalent network solids are typically...
13.2K
Molecular Geometry and Dipole Moments02:36

Molecular Geometry and Dipole Moments

The VSEPR theory can be used to determine the electron pair geometries and molecular structures as follows:
12.3K
Biasing of Metal-Semiconductor Junctions01:27

Biasing of Metal-Semiconductor Junctions

Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
176
Modeling of Diode Reverse Characteristics01:14

Modeling of Diode Reverse Characteristics

In electronic circuits, reverse-biased diode configurations are critical for regulating voltage levels. Zener diodes exploit the reverse breakdown phenomenon and exhibit a controlled breakdown at a specific Zener voltage (VZ). They are designed to maintain a constant voltage across their terminals and are commonly used for voltage regulation in circuits.
When a reverse voltage applied to a Zener diode exceeds its breakdown voltage, the diode enters the breakdown region. At this point, the...
209