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Updated: May 13, 2025

Bulk and Thin Film Synthesis of Compositionally Variant Entropy-stabilized Oxides

Bulk and Thin Film Synthesis of Compositionally Variant Entropy-stabilized Oxides

Published on: May 29, 2018

Ferroelectric HfO₂-ZrO₂ Multilayers with Reduced Wake-Up.

Barnik Mandal^1,2, Adrian-Marie Philippe³, Nathalie Valle³

¹Smart Materials Unit, Luxembourg Institute of Science and Technology (LIST), 41 Rue de Brill, L-4422 Belvaux, Luxembourg.

|April 14, 2025

Summary

This study demonstrates ferroelectricity in the thickest HfO2-ZrO2 multilayer film yet. Multilayering stabilizes ferroelectric properties and accelerates wake-up behavior in hafnia-based films.

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Last Updated: May 13, 2025

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Molten-Salt Synthesis of Complex Metal Oxide Nanoparticles

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Published on: October 27, 2018

Area of Science:

Materials Science
Solid-State Physics
Thin Film Technology

Background:

Ferroelectricity in hafnium oxide (HfO2) has spurred research into doped and solid-solution films.
Multilayering offers potential for tuning functional properties but remains underexplored in HfO2-ZrO2 systems.

Purpose of the Study:

To investigate ferroelectricity in solution-processed HfO2-ZrO2 multilayer thin films.
To establish a thicker multilayer ferroelectric film and explore its properties.

Main Methods:

Fabrication of a 50 nm-thick HfO2-ZrO2 multilayer film using a solution-processing technique.
Structural characterization via transmission electron microscopy (TEM) and energy-dispersive X-ray spectroscopy.
Electrical characterization to assess ferroelectric properties and wake-up behavior.

Main Results:

Demonstration of ferroelectricity in the thickest HfO2-ZrO2 multilayer film (50 nm) to date.
TEM confirmed multilayer structure with grain continuity, indicating stabilization of polar phase in ZrO2 by HfO2.
Achieved remanent polarization of 9 μC cm⁻², with accelerated wake-up behavior due to enhanced breakdown strength from interfaces.

Conclusions:

Multilayer HfO2-ZrO2 films can exhibit robust ferroelectric properties.
The multilayer architecture facilitates stabilization of ferroelectricity and offers a pathway for faster wake-up in thick ferroelectric films.