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Updated: May 13, 2025

In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx
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Investigation of dual memory behavior in RRAM: coexistence of resistive and capacitive switching phenomena

Hyoseob Kim1, Suhan Kim1, Jae-Yeong Cho2

  • 1Department of Intelligent Semiconductor Engineering, Chung-Ang University, Seoul, 06974, Republic of Korea.

Scientific Reports
|April 15, 2025
PubMed

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