Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Related Concept Videos

MOSFET: Enhancement Mode01:22

MOSFET: Enhancement Mode

242
Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no...
242
MOSFET: Depletion Mode01:20

MOSFET: Depletion Mode

278
Depletion-mode MOSFETs represent a unique subset of MOSFET technology, functioning fundamentally differently from their enhancement-mode counterparts. Unlike enhancement MOSFETs, which require a positive gate-source voltage (Vgs) to turn on, depletion-mode MOSFETs are inherently conductive and "normally on" devices.
The primary characteristic of depletion-mode MOSFETs is their ability to conduct current between the drain and source terminals without gate bias. This inherent conductivity...
278
Biasing of FET01:22

Biasing of FET

195
Biasing a Junction Field Effect Transistor (JFET) is crucial for setting operational parameters and ensuring efficient functioning in electronic circuits. JFETs are characterized by using a single carrier type in N-channel or P-channel configurations, where the channel is surrounded by PN junctions. These junctions are central to the device's ability to control current flow.
In an N-channel JFET, the structure consists of N-type material forming the channel on a P-type substrate, with the...
195
Non-ohmic Devices00:51

Non-ohmic Devices

986
In most substances, the current flow is proportional to the voltage applied to it. A simple relationship between the values of current, voltage, and resistance is known as Ohm's law. Nonohmic devices do not exhibit a linear relationship between voltage and current. One such device is the semiconducting circuit element known as a diode. A diode is a circuit device that allows current flow in only one direction.
Consider a simple circuit consisting of a battery, a diode, and a resistor. A...
986
Switching of BJT01:22

Switching of BJT

346
Switching behavior in Bipolar Junction Transistors (BJTs) is a fundamental aspect utilized in various electronic circuits, particularly for digital logic applications like switches and amplifiers. In a typical switching circuit, a BJT alternates between cut-off and saturation modes, corresponding to the "off" and "on" states, respectively, thus behaving like an ideal switch.
Cut-off Mode ("Off" State): In this state, both the emitter-base and collector-base junctions are...
346
Biasing of Metal-Semiconductor Junctions01:27

Biasing of Metal-Semiconductor Junctions

174
Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
174

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by
Same author

A Scalable Pathway for Plan-View TEM of 2D Materials and Surface Layers.

Microscopy and microanalysis : the official journal of Microscopy Society of America, Microbeam Analysis Society, Microscopical Society of Canada·2026
Same author

Tracking the Evolution of Iridium Nanocatalysts During Acidic Oxygen Evolution Reaction by Substrate-Stabilized Identical-Location Transmission Electron Microscopy.

Small methods·2026
Same author

Flexible Ferrite Magnetic Composite Films for Electromagnetic Applications.

ACS materials Au·2026
Same author

Stack-Engineered Mode Selection in PtMn/(Co/Pd)<sub>n</sub> Multilayers Enables Deterministic Analog Spin-Orbit Torque Synapses.

ACS applied materials & interfaces·2026
Same author

In Situ Scanning Transmission Electron Microscopy/Transmission Electron Microscopy Study of Defect-Driven Ag Ion Dynamics and Filament Evolution in CuO Nanowire-Based Memristors.

ACS applied materials & interfaces·2026
Same author

Magneto-voltaic activity of single-atom iron on reduced graphene oxide for magneto-catalytic conversion of H<sub>2</sub>O<sub>2</sub> into O<sub>2</sub>.

Chemical science·2025

Related Experiment Video

Updated: May 11, 2025

In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx
09:49

In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx

Published on: May 13, 2020

4.0K

Dual SOT Switching Modes in a Single Device Geometry for Neuromorphic Computing.

Abhijeet Ranjan1, Tamkeen Farooq2, Chong-Chi Chi3

  • 1Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan.

Nano Letters
|April 17, 2025
PubMed
Summary

This study introduces a novel device for neuromorphic computing that uses dual spin-orbit torque (SOT) switching modes. This breakthrough enables both binary and multilevel switching for advanced artificial neural networks (ANNs).

Keywords:
Artificial NeuronsArtificial SynapsesBinary SwitchingMultilevel SwitchingNeuromorphic ComputingSpin−Orbit Torque

More Related Videos

Assembly and Characterization of Biomolecular Memristors Consisting of Ion Channel-doped Lipid Membranes
08:07

Assembly and Characterization of Biomolecular Memristors Consisting of Ion Channel-doped Lipid Membranes

Published on: March 9, 2019

7.7K
Author Spotlight: Modular Neuronal Networks for Analyzing Brain Functions
07:38

Author Spotlight: Modular Neuronal Networks for Analyzing Brain Functions

Published on: June 7, 2024

1.4K

Related Experiment Videos

Last Updated: May 11, 2025

In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx
09:49

In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx

Published on: May 13, 2020

4.0K
Assembly and Characterization of Biomolecular Memristors Consisting of Ion Channel-doped Lipid Membranes
08:07

Assembly and Characterization of Biomolecular Memristors Consisting of Ion Channel-doped Lipid Membranes

Published on: March 9, 2019

7.7K
Author Spotlight: Modular Neuronal Networks for Analyzing Brain Functions
07:38

Author Spotlight: Modular Neuronal Networks for Analyzing Brain Functions

Published on: June 7, 2024

1.4K

Area of Science:

  • Materials Science
  • Computer Engineering
  • Physics

Background:

  • Neuromorphic computing seeks to mimic the brain's efficiency using artificial neurons and synapses.
  • Binary and multilevel switching are crucial for these functionalities.
  • Existing devices often require modifications to achieve dual-mode switching.

Purpose of the Study:

  • To present a single device capable of both binary and multilevel switching for neuromorphic applications.
  • To demonstrate the device's potential in artificial neural networks (ANNs).
  • To highlight the energy efficiency and simplified fabrication of the proposed device.

Main Methods:

  • Fabrication of a PtMn/(Co/Pd)4/Ta device.
  • Utilizing dual spin-orbit torque (SOT) switching mechanisms.
  • Investigating structural changes induced by different current treatments (moderate vs. high).

Main Results:

  • The device uniquely exhibits both binary and multilevel switching within the same structure.
  • Binary switching occurs via domain wall propagation at ~65 mA.
  • Multilevel switching is achieved via domain nucleation at ~85 mA, attributed to structural changes.
  • The device achieved 96% accuracy in digit/letter recognition on the MNIST dataset using an ANN.
  • Demonstrated robust perpendicular magnetic anisotropy (PMA) and dual-mode switching under a small in-plane field.

Conclusions:

  • The developed device offers a promising, energy-efficient solution for neuromorphic computing.
  • Its dual-mode switching capability eliminates the need for device modifications.
  • The simplified fabrication and robust performance make it suitable for advanced AI applications.