Optical and Transport Properties of ZnO Thin Films Prepared by Reactive Pulsed Mid-Frequency Sputtering Combined with...

The study explores the optical and transport properties of polycrystalline ZnO thin films prepared using reactive pulsed mid-frequency sputtering with RF electron cyclotron wave resonance (ECWR) plasma. This deposition method increases the ionization degree of sputtered particles, the dissociation of reactive gas and the plasma density of pulsed reactive magnetron plasma. Optical absorption spectra reveal a sharp Urbach edge, indicating low valence band disorder. Lattice disorder and deep defect concentration are more likely to occur in samples with higher roughness. PL analysis at low temperature reveals in all samples a relatively slow (μs) red emission band related to deep bulk defects. The fast (sub-ns), surface-related blue PL band was observed in some samples. Blue PL disappeared after annealing in air at 500 °C. Room temperature Hall effect measurements confirm n-type conductivity, though with relatively low mobility, suggesting defect-related scattering. Persistent photoconductivity was observed under UV illumination, indicating deep trap states affecting charge transport. These results highlight the impact of deposition and post-treatment on polycrystalline ZnO thin films, offering insights into optimizing their performance for optoelectronic applications, such as UV detectors and transparent conductive oxides.