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Research on Single-Event Effect Hardening Method of Transverse Split-Gate Trench Metal-Oxide-Semiconductor
Mengtian Bao1,2, Ying Wang2, Jianqun Yang3
1School of Electronic Information, Huzhou College, Huzhou 313000, China.
Micromachines
|April 26, 2025
Summary
Heavy-ion irradiation causes single-event burnout (SEB) in power MOSFETs. A new process optimization hardens devices, significantly increasing the SEB failure threshold voltage and improving radiation tolerance.
Area of Science:
- Semiconductor device physics
- Radiation effects in electronics
- Power electronics
Background:
- Transverse split-gate trench (TSGT) power MOSFETs are susceptible to single-event burnout (SEB) under heavy-ion irradiation.
- Understanding SEB mechanisms is crucial for reliable operation of power devices in radiation environments.
Purpose of the Study:
- To investigate the SEB effect and degradation in TSGT power MOSFETs under heavy-ion irradiation.
- To propose and validate a process optimization method for enhancing SEB tolerance.
Main Methods:
- Heavy-ion irradiation tests using Bismuth ions on 120 V-rated TSGT power MOSFETs.
- Experimental measurement of SEB failure threshold voltage (V_SEB).
- TCAD simulations to analyze degradation mechanisms and validate hardening effects.
Main Results:
- The initial V_SEB was measured at 72 V (52.6% of breakdown voltage) and decreased with increasing flux.
- Simulations identified localized "hot spots" as the cause of drain current degradation.
- The proposed process optimization increased V_SEB to 115 V (89.1% of breakdown voltage) without custom wafers.
Conclusions:
- Heavy-ion irradiation significantly degrades TSGT power MOSFETs, with V_SEB being a critical parameter.
- Process optimization offers an effective, wafer-less solution to enhance SEB tolerance.
- The hardened devices demonstrate improved reliability for space and high-radiation applications.
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