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¹Innovation Center for Electronic Design Automation Technology, Hangzhou Dianzi University, Hangzhou 310018, China.

|April 26, 2025

Summary

This summary is machine-generated.

This study presents a new linear small-signal model for multi-cell heterojunction bipolar transistors (HBTs) crucial for radio frequency (RF) power amplifiers. The model enhances accuracy for RF circuit design and power amplifier optimization.

Keywords:

HBT device modeling direct current characteristics large-signal verification multi-cell device radio frequency characteristics radio frequency parasitic extraction

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Area of Science:

Electrical Engineering
Semiconductor Device Physics

Background:

Multi-cell heterojunction bipolar transistors (HBTs) are vital components in radio frequency (RF) power amplifiers.
Accurate device modeling is essential for optimizing RF circuit performance and reliability.

Purpose of the Study:

To address the modeling challenges of multi-cell HBTs.
To propose an innovative linear small-signal modeling method for improved accuracy in RF applications.

Main Methods:

Constructed an equivalent circuit model incorporating peripheral parasitic parameters based on device layout.
Employed a step-by-step parameter extraction method, focusing on saturation current, temperature coefficients, thermal resistance, and junction capacitance.
Analyzed device layout characteristics to account for parasitic effects in multi-cell structures.

Main Results:

Achieved input/output reflection coefficient errors below 1.66% from 0.7-25 GHz under zero-bias conditions.
Demonstrated significantly improved model accuracy compared to directly paralleled single-cell models.
Validated the model with power simulation results closely matching measured data at 2.6 GHz and 3.5 GHz.

Conclusions:

The developed modeling method substantially enhances the accuracy of multi-cell HBT models for RF circuit design.
This approach provides an effective tool for optimizing the performance of high-power amplifiers.