High-Performance Self-Powered Photodetector Enabled by Te-Doped GeH Nanostructures Engineering

Area of Science:

• Materials Science
• Nanotechnology
• Optoelectronics

Background:

• Two-dimensional (2D) Xenes, like graphene, offer unique electronic and photoresponse properties.
• Germanene-based systems are underexplored for optoelectronic applications despite their potential.

Purpose of the Study:

• To develop a facile synthesis for tellurium-doped germanene hydride (Te-GeH) nanostructures.
• To engineer high-performance photoelectrochemical (PEC) photodetectors using these 2D materials.

Main Methods:

• Chemical synthesis of 2D Te-GeH nanostructures with atomic-scale control.
• Fabrication of PEC photodetectors using a drop-casting technique.

Main Results:

• 2D Te-GeH NSs demonstrated broadband absorption from UV to visible light.
• Engineered PEC photodetectors achieved high responsivity (708.5 µA/W) and ultrafast response.
• Devices operated efficiently at zero-bias voltage, functioning as self-powered broadband photodetectors.

Conclusions:

• This work advances the understanding of germanene derivatives for optoelectronics.
• Developed Te-GeH NSs show promise for next-generation energy-efficient sensors and adaptive optical networks.