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Novel APD Array Configurations for Improved Detection Area and Frequency Response.

Xuan Zeng¹, Xuzhen Yu¹, Hewei Zhang¹

¹Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan 430074, China.

Sensors (Basel, Switzerland)

|April 28, 2025

Summary

This summary is machine-generated.

Novel avalanche photodiode (APD) array structures enhance detection area and bandwidth. Inductor integration boosts bandwidth to 1.21 GHz, offering improved SNR and lower power consumption.

Keywords:

avalanche photodiode gain peaking large detection area signal-to-noise ratio

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Area of Science:

Optoelectronics
Semiconductor Devices
Photonics

Background:

Conventional photodetectors face a trade-off between detection area and bandwidth.
Existing avalanche photodiode (APD) array designs often compromise bandwidth when increasing detection area.

Purpose of the Study:

To introduce two novel APD array structures that enhance both detection area and bandwidth.
To overcome the limitations of conventional photodetector designs.

Main Methods:

Theoretical simulation of parameter impacts on APD array bandwidths.
Experimental validation of fabricated 2x2 APD arrays on PCB boards.
Integration of inductors to enhance array bandwidth.

Main Results:

One APD array structure achieved a bandwidth of 780 MHz (1.41x increase).
A second APD array structure reached 1.21 GHz (1.35x increase).
The novel structures maintained high bandwidth while expanding the detection area.

Conclusions:

The developed APD array structures successfully enhance detection area and bandwidth simultaneously.
Structure 2 is recommended due to lower noise, superior signal-to-noise ratio (SNR), and reduced power consumption compared to Structure 1.
These findings offer a significant advancement in photodetector technology for high-performance applications.